Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedRohm SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)26A (Ta), 80A (Tc)200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 10A, 10V3.1mOhm @ 26A, 10V95mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 1mA3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 4.5 V175 nC @ 10 V180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
254 pF @ 25 V7850 pF @ 15 V10210 pF @ 25 V
Power Dissipation (Max)
650mW (Ta)3W (Ta)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-HSOPPowerPAK® 8 x 8SOT-23-3
Package / Case
8-PowerTDFNPowerPAK® 8 x 8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3125L-7
MOSFET P-CH 30V 2.5A SOT23
Diodes Incorporated
503,241
In Stock
474,000
Factory
1 : $0.40000
Cut Tape (CT)
3,000 : $0.07734
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
95mOhm @ 3.8A, 10V
2.1V @ 250µA
3.1 nC @ 4.5 V
±20V
254 pF @ 25 V
-
650mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
HSOP8
RS1E260ATTB1
MOSFET P-CH 30V 26A/80A 8HSOP
Rohm Semiconductor
10,464
In Stock
1 : $5.87000
Cut Tape (CT)
2,500 : $1.97984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
26A (Ta), 80A (Tc)
4.5V, 10V
3.1mOhm @ 26A, 10V
2.5V @ 1mA
175 nC @ 10 V
±20V
7850 pF @ 15 V
-
3W (Ta)
150°C (TJ)
-
-
Surface Mount
8-HSOP
8-PowerTDFN
PowerPAK 8 x 8
SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : $5.66000
Cut Tape (CT)
2,000 : $1.87945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200A (Tc)
10V
1.9mOhm @ 10A, 10V
3.5V @ 250µA
180 nC @ 10 V
±20V
10210 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.