Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTH11P50 MOSFET P-CH 500V 11A TO247 Littelfuse Inc.	110 In Stock	1 : $20.50000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	750mOhm @ 5.5A, 10V	5V @ 250µA	130 nC @ 10 V	±20V	4700 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH20P50P MOSFET P-CH 500V 20A TO247 Littelfuse Inc.	1,422 In Stock	1 : $21.10000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	450mOhm @ 10A, 10V	4V @ 250µA	103 nC @ 10 V	±20V	5120 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTQ22N50P MOSFET N-CH 500V 22A TO3P Littelfuse Inc.	125 In Stock	1 : $9.46000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFH22N50P MOSFET N-CH 500V 22A TO247AD Littelfuse Inc.	436 In Stock	1 : $9.98000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 2.5mA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IRFP23N50LPBF MOSFET N-CH 500V 23A TO247-3 Vishay Siliconix	447 In Stock	1 : $13.71000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	23A (Tc)	10V	235mOhm @ 14A, 10V	5V @ 250µA	150 nC @ 10 V	±30V	3600 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IXTH460P2 MOSFET N-CH 500V 24A TO247 IXYS	0 In Stock	30 : $7.77167 Tube	PolarP2™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	24A (Tc)	10V	270mOhm @ 12A, 10V	4.5V @ 250µA	48 nC @ 10 V	±30V	2890 pF @ 25 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.