Single FETs, MOSFETs

Results: 25
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
746
In Stock
1 : $8.43000
Cut Tape (CT)
1,000 : $3.10609
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
5,602
In Stock
1 : $9.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,461
In Stock
1 : $9.72000
Cut Tape (CT)
1,000 : $3.76545
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
655
In Stock
1 : $12.19000
Cut Tape (CT)
1,000 : $5.08565
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-HSOF-8-2
IPT60R022S7XTMA1
MOSFET N-CH 600V 23A 8HSOF
Infineon Technologies
3,768
In Stock
1 : $16.42000
Cut Tape (CT)
2,000 : $8.71848
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
12V
22mOhm @ 23A, 12V
4.5V @ 1.44mA
150 nC @ 12 V
±20V
5639 pF @ 300 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
960
In Stock
1 : $18.07000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
203A (Tc)
10V
2.7mOhm @ 100A, 10V
4.6V @ 265µA
200 nC @ 10 V
±20V
12000 pF @ 75 V
-
3.8W (Ta), 556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
1,007
In Stock
1 : $20.24000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
923
In Stock
1 : $21.46000
Cut Tape (CT)
800 : $16.43686
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
Infineon Technologies
931
In Stock
1 : $25.33000
Cut Tape (CT)
1,000 : $13.26105
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
41mOhm @ 25A, 18V
5.7V @ 11.5mA
63 nC @ 18 V
+18V, -15V
2290 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
458
In Stock
1 : $34.23000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
26.9mOhm @ 41A, 18V
5.2V @ 17.6mA
109 nC @ 18 V
+20V, -5V
3460 pF @ 800 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
D2PAK-7
NTBG028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER
onsemi
740
In Stock
7,200
Factory
1 : $54.49000
Cut Tape (CT)
800 : $41.34951
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
71A (Tc)
20V
40mOhm @ 60A, 20V
4.3V @ 20mA
222 nC @ 20 V
+25V, -15V
4160 pF @ 800 V
-
428W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-HSOF-8-1
IPT026N10N5ATMA1
MOSFET N-CH 100V 27A/202A 8HSOF
Infineon Technologies
5,347
In Stock
1 : $7.04000
Cut Tape (CT)
2,000 : $2.44175
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
27A (Ta), 202A (Tc)
6V, 10V
2.6mOhm @ 150A, 10V
3.8V @ 158µA
120 nC @ 10 V
±20V
8800 pF @ 50 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
950
In Stock
1 : $8.33000
Cut Tape (CT)
1,000 : $3.06247
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
+20V, -7V
290 pF @ 800 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
227
In Stock
1 : $10.24000
Tube
-
Tube
Active
-
SiCFET (Silicon Carbide)
1700 V
6A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
PG-TO263-7-12
IMBG120R220M1HXTMA1
SICFET N-CH 1.2KV 13A TO263
Infineon Technologies
1,030
In Stock
1 : $10.25000
Cut Tape (CT)
1,000 : $4.03581
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
-
294mOhm @ 4A, 18V
5.7V @ 1.6mA
9.4 nC @ 18 V
+18V, -15V
312 pF @ 800 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
745
In Stock
1 : $10.73000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3L
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
onsemi
75,547
In Stock
1 : $15.11000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1700 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27.5 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO247-4-1
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
334
In Stock
1 : $24.49000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
PG-TO263-7-12
IMBG120R045M1HXTMA1
SICFET N-CH 1.2KV 47A TO263
Infineon Technologies
518
In Stock
1 : $24.51000
Cut Tape (CT)
1,000 : $10.33933
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
63mOhm @ 16A, 18V
5.7V @ 7.5mA
46 nC @ 18 V
+18V, -15V
1527 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R107M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
810
In Stock
1 : $10.80000
Cut Tape (CT)
1,000 : $4.53642
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
141mOhm @ 8.9A, 18V
5.7V @ 2.6mA
15 nC @ 18 V
+23V, -5V
496 pF @ 400 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R060M1HXTMA1
SICFET N-CH 1.2KV 36A TO263
Infineon Technologies
1,813
In Stock
1 : $16.39000
Cut Tape (CT)
1,000 : $7.51685
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
-
83mOhm @ 13A, 18V
5.7V @ 5.6mA
34 nC @ 18 V
+18V, -15V
1145 pF @ 800 V
-
181W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
6
In Stock
1 : $33.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
2000 V
34A (Tc)
15V, 18V
98mOhm @ 13A, 18V
5.5V @ 7.7mA
64 nC @ 18 V
+20V, -7V
-
-
267W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-3
MSC750SMA170B
SICFET N-CH 1700V 7A TO247-3
Microchip Technology
79
In Stock
1 : $9.00000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
0
In Stock
Check Lead Time
1 : $79.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
0
In Stock
Check Lead Time
1 : $127.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
2000 V
123A (Tc)
15V, 18V
16.5mOhm @ 60A, 18V
5.5V @ 48mA
246 nC @ 18 V
+20V, -7V
-
-
552W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
Showing
of 25

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.