Single FETs, MOSFETs

Results: 14
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
NTHL045N065SC1
SIC MOS TO247-3L 650V
onsemi
766
In Stock
2,700
Factory
1 : $19.74000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
66A (Tc)
15V, 18V
50mOhm @ 25A, 18V
4.3V @ 8mA
105 nC @ 18 V
+22V, -8V
1870 pF @ 325 V
-
291W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO247-3
SPW55N80C3FKSA1
MOSFET N-CH 800V 54.9A TO247-3
Infineon Technologies
882
In Stock
1 : $24.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
54.9A (Tc)
10V
85mOhm @ 32.6A, 10V
3.9V @ 3.3mA
288 nC @ 10 V
±20V
7520 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
C3M0280090J-TR
C3M0065090J
SICFET N-CH 900V 35A D2PAK-7
Wolfspeed, Inc.
2,664
In Stock
1 : $28.74000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
900 V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30 nC @ 15 V
+19V, -8V
660 pF @ 600 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
NTHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
997
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL015N065SC1
SILICON CARBIDE (SIC) MOSFET - 1
onsemi
416
In Stock
1,350
Factory
1 : $46.19000
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Active
N-Channel
SiCFET (Silicon Carbide)
650 V
163A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4790 pF @ 325 V
-
643W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL060N090SC1
SICFET N-CH 900V 46A TO247-3
onsemi
255
In Stock
2,250
Factory
1 : $19.15000
Tube
-
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Active
N-Channel
SiCFET (Silicon Carbide)
900 V
46A (Tc)
15V
84mOhm @ 20A, 15V
4.3V @ 5mA
87 nC @ 15 V
+19V, -10V
1770 pF @ 450 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SCT4026DRC15
SCT4036KRC15
1200V, 36M, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
4,556
In Stock
1 : $31.07000
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Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-3
NVHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
625
In Stock
1 : $36.20000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247-4
NTH4L020N090SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
842
In Stock
2,700
Factory
1 : $46.66000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
116A (Tc)
15V, 18V
28mOhm @ 60A, 15V
4.3V @ 20mA
196 nC @ 15 V
+22V, -8V
4415 pF @ 450 V
-
484W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NTH4L045N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
173
In Stock
89,550
Factory
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
55A (Tc)
15V, 18V
50mOhm @ 25A, 18V
4.3V @ 8mA
105 nC @ 18 V
+22V, -8V
1870 pF @ 325 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT4026DRC15
SCT4026DRC15
750V, 26M, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
3,434
In Stock
1 : $30.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
56A (Tc)
18V
34mOhm @ 29A, 18V
4.8V @ 15.4mA
94 nC @ 18 V
+21V, -4V
2320 pF @ 500 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NTH4L060N065SC1
SIC MOS TO247-4L 650V
onsemi
499
In Stock
2,700
Factory
1 : $16.85000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
15V, 18V
70mOhm @ 20A, 18V
4.3V @ 6.5mA
74 nC @ 18 V
+22V, -8V
1473 pF @ 325 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
1,339
In Stock
1 : $24.99000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
46A (Tc)
15V, 18V
84mOhm @ 20A, 15V
4.3V @ 5mA
87 nC @ 15 V
+22V, -8V
1770 pF @ 450 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-247-3
NVHL020N090SC1
SICFET N-CH 900V 118A TO247-3
onsemi
168
In Stock
98,100
Factory
1 : $46.17000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
118A (Tc)
15V
28mOhm @ 60A, 15V
4.3V @ 20mA
196 nC @ 15 V
+19V, -10V
4415 pF @ 450 V
-
503W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.