Single FETs, MOSFETs

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of 119

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPD60R180P7SAUMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	13,748 In Stock	1 : $2.58000 Cut Tape (CT) 2,500 : $0.89108 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R190C6ATMA1 MOSFET N-CH 600V 20.2A D2PAK Infineon Technologies	3,280 In Stock	1 : $5.37000 Cut Tape (CT) 1,000 : $1.95622 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 9.5A, 10V	3.5V @ 630µA	63 nC @ 10 V	±20V	1400 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R160C6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	1,965 In Stock	1 : $6.66000 Cut Tape (CT) 1,000 : $2.29907 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R120C7XKSA1 MOSFET N-CH 600V 11A TO220 Infineon Technologies	1,482 In Stock	1 : $6.97000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	120mOhm @ 7.8A, 10V	4V @ 390µA	34 nC @ 10 V	±20V	1500 pF @ 400 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R080P7XKSA1 MOSFET N-CH 600V 37A TO247-3 Infineon Technologies	1,432 In Stock	1 : $8.42000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	80mOhm @ 11.8A, 10V	4V @ 590µA	51 nC @ 10 V	±20V	2180 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPB60R099C6ATMA1 MOSFET N-CH 600V 37.9A D2PAK Infineon Technologies	3,364 In Stock	1 : $10.05000 Cut Tape (CT) 1,000 : $3.99764 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 18.1A, 10V	3.5V @ 1.21mA	119 nC @ 10 V	±20V	2660 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R080CFDAFKSA1 MOSFET N-CH 650V 43.3A TO247-3 Infineon Technologies	1,160 In Stock	1 : $12.75000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	43.3A (Tc)	10V	80mOhm @ 17.6A, 10V	4.5V @ 1.76mA	161 nC @ 10 V	±20V	4440 pF @ 100 V	-	391W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3
IPW60R070C6FKSA1 MOSFET N-CH 600V 53A TO247-3 Infineon Technologies	2,473 In Stock	1 : $13.66000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	53A (Tc)	10V	70mOhm @ 25.8A, 10V	3.5V @ 1.72mA	170 nC @ 10 V	±20V	3800 pF @ 100 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPW60R037P7XKSA1 MOSFET N-CH 650V 76A TO247-3 Infineon Technologies	3,506 In Stock	1 : $13.79000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	76A (Tc)	10V	37mOhm @ 29.5A, 10V	4V @ 1.48mA	121 nC @ 10 V	±20V	5243 pF @ 400 V	-	255W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPW60R041C6FKSA1 MOSFET N-CH 600V 77.5A TO247-3 Infineon Technologies	4,520 In Stock	1 : $21.00000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	77.5A (Tc)	10V	41mOhm @ 44.4A, 10V	3.5V @ 2.96mA	290 nC @ 10 V	±20V	6530 pF @ 10 V	-	481W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPZ60R017C7XKSA1 MOSFET N-CH 600V 109A TO247-4 Infineon Technologies	238 In Stock	1 : $26.45000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	109A (Tc)	10V	17mOhm @ 58.2A, 10V	4V @ 2.91mA	240 nC @ 10 V	±20V	9890 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4	TO-247-4
IPW60R017C7XKSA1 HIGH POWER_NEW Infineon Technologies	1,357 In Stock	1 : $28.39000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	109A (Tc)	10V	17mOhm @ 58.2A, 10V	4V @ 2.91mA	240 nC @ 10 V	±20V	9890 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IPW65R019C7FKSA1 MOSFET N-CH 650V 75A TO247-3 Infineon Technologies	395 In Stock	1 : $29.37000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	19mOhm @ 58.3A, 10V	4V @ 2.92mA	215 nC @ 10 V	±20V	9900 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPD60R180P7ATMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	3,436 In Stock	1 : $2.39000 Cut Tape (CT) 2,500 : $1.13932 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA60R180P7SXKSA1 MOSFET N-CHANNEL 600V 18A TO220 Infineon Technologies	4,791 In Stock	1 : $3.33000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	26W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-312	TO-220-3 Full Pack
IPP60R190P6XKSA1 MOSFET N-CH 600V 20.2A TO220-3 Infineon Technologies	11,483 In Stock	1 : $3.49000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	4.5V @ 630µ	11 nC @ 10 V	±20V	1750 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPP60R120P7XKSA1 MOSFET N-CH 600V 26A TO220-3 Infineon Technologies	1,384 In Stock	1 : $5.23000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	120mOhm @ 8.2A, 10V	4V @ 410µA	36 nC @ 10 V	±20V	1544 pF @ 400 V	-	95W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPA60R190C6XKSA1 MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies	9,226 In Stock	1 : $5.45000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 9.5A, 10V	3.5V @ 630µA	63 nC @ 10 V	±20V	1400 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPA60R120P7XKSA1 MOSFET N-CH 600V 26A TO220 Infineon Technologies	675 In Stock	1 : $5.72000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	120mOhm @ 8.2A, 10V	4V @ 410µA	36 nC @ 10 V	±20V	1544 pF @ 400 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPW60R180P7XKSA1 MOSFET N-CH 650V 18A TO247-3 Infineon Technologies	272 In Stock	1 : $5.79000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPW60R099P7XKSA1 MOSFET N-CH 600V 31A TO247-3 Infineon Technologies	300 In Stock	1 : $6.66000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	117W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPW60R190C6FKSA1 MOSFET N-CH 600V 20.2A TO247-3 Infineon Technologies	233 In Stock	1 : $6.86000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 9.5A, 10V	3.5V @ 630µA	63 nC @ 10 V	±20V	1400 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPA60R060P7XKSA1 MOSFET N-CHANNEL 600V 48A TO220 Infineon Technologies	290 In Stock	1 : $8.78000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	29W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R099P6XKSA1 MOSFET N-CH 600V 37.9A TO247-3 Infineon Technologies	514 In Stock	1 : $8.97000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPW65R095C7XKSA1 MOSFET N-CH 650V 24A TO247 Infineon Technologies	473 In Stock	1 : $9.49000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	95mOhm @ 11.8A, 10V	4V @ 590µA	45 nC @ 10 V	±20V	2140 pF @ 400 V	-	128W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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