250mA (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
STN1NK80Z MOSFET N-CH 800V 250MA SOT223 STMicroelectronics	10,820 In Stock	1 : $2.66000 Cut Tape (CT) 4,000 : $0.70182 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	250mA (Tc)	10V	16Ohm @ 500mA, 10V	4.5V @ 50µA	7.7 nC @ 10 V	±30V	160 pF @ 25 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
STS1NK60Z MOSFET N-CH 600V 250MA 8SO STMicroelectronics	1,779 In Stock	1 : $1.95000 Cut Tape (CT) 2,500 : $0.51203 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	250mA (Tc)	10V	15Ohm @ 400mA, 10V	4.5V @ 50µA	6.9 nC @ 10 V	±30V	94 pF @ 25 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NDTL01N60ZT1G MOSFET N-CH 600V 250MA SOT223 Fairchild Semiconductor	6,000 Marketplace	1,137 : $0.36920 Bulk	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	250mA (Tc)	-	15Ohm @ 400mA, 10V	4.5V @ 50µA	4.9 nC @ 10 V	±30V	92 pF @ 25 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
DMP45H150DHE-13 MOSFET P-CH 450V 250MA SOT223 Diodes Incorporated	0 In Stock Check Lead Time	1 : $1.14000 Cut Tape (CT) 2,500 : $0.26426 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	450 V	250mA (Tc)	10V	150Ohm @ 50mA, 10V	4V @ 250µA	1.8 nC @ 10 V	±30V	59.2 pF @ 25 V	-	13.9W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
IXCP01N90E MOSFET N-CH 900V 250MA TO220AB IXYS	0 In Stock	50 : $6.82420 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	250mA (Tc)	10V	80Ohm @ 50mA, 10V	5V @ 25µA	7.5 nC @ 10 V	±20V	133 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
NDTL01N60ZT3G MOSFET N-CH 600V 250MA SOT223 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	250mA (Tc)	10V	15Ohm @ 400mA, 10V	4.5V @ 50µA	4.9 nC @ 10 V	±30V	92 pF @ 25 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NDTL01N60ZT1G MOSFET N-CH 600V 250MA SOT223 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	250mA (Tc)	10V	15Ohm @ 400mA, 10V	4.5V @ 50µA	4.9 nC @ 10 V	±30V	92 pF @ 25 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.