21A (Tc) Single FETs, MOSFETs

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of 198

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSC520N15NS3GATMA1 MOSFET N-CH 150V 21A TDSON-8-5 Infineon Technologies	605 In Stock	1 : $2.67000 Cut Tape (CT) 5,000 : $0.65992 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	52mOhm @ 18A, 10V	4V @ 35µA	12 nC @ 10 V	±20V	890 pF @ 75 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
BSZ520N15NS3GATMA1 MOSFET N-CH 150V 21A 8TSDSON Infineon Technologies	11,322 In Stock	1 : $3.26000 Cut Tape (CT) 5,000 : $0.86529 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	52mOhm @ 18A, 10V	4V @ 35µA	12 nC @ 10 V	±20V	890 pF @ 75 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SI7454DDP-T1-GE3 MOSFET N-CH 100V 21A PPAK SO-8 Vishay Siliconix	10,429 In Stock	1 : $3.32000 Cut Tape (CT) 3,000 : $0.93115 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	21A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	3V @ 250µA	19.5 nC @ 10 V	±20V	550 pF @ 50 V	-	4.1W (Ta), 29.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB60R165CPATMA1 MOSFET N-CH 600V 21A TO263-3 Infineon Technologies	4,078 In Stock	1 : $7.43000 Cut Tape (CT) 1,000 : $2.65872 Tape & Reel (TR)	CoolMOS™ CP	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	165mOhm @ 12A, 10V	3.5V @ 790µA	52 nC @ 10 V	±20V	2000 pF @ 100 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3120ALGC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	3,858 In Stock	1 : $15.37000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	618 In Stock	1 : $19.35000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SIR836DP-T1-GE3 MOSFET N-CH 40V 21A PPAK SO-8 Vishay Siliconix	11,912 In Stock	1 : $1.91000 Cut Tape (CT) 3,000 : $0.48626 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	21A (Tc)	4.5V, 10V	19mOhm @ 10A, 10V	2.5V @ 250µA	18 nC @ 10 V	±20V	600 pF @ 20 V	-	3.9W (Ta), 15.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPD530N15N3GATMA1 MOSFET N-CH 150V 21A TO252-3 Infineon Technologies	1,470 In Stock	1 : $3.05000 Cut Tape (CT) 2,500 : $0.83408 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	53mOhm @ 18A, 10V	4V @ 35µA	12 nC @ 10 V	±20V	887 pF @ 75 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQB19N20LTM MOSFET N-CH 200V 21A D2PAK onsemi	939 In Stock	1 : $3.83000 Cut Tape (CT) 800 : $1.26691 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	21A (Tc)	5V, 10V	140mOhm @ 10.5A, 10V	2V @ 250µA	35 nC @ 5 V	±20V	2200 pF @ 25 V	-	3.13W (Ta), 140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDPF320N06L MOSFET N-CH 60V 21A TO220F onsemi	1,695 In Stock	1 : $4.36000 Tube	PowerTrench®	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	21A (Tc)	5V, 10V	25mOhm @ 21A, 10V	2.5V @ 250µA	30.2 nC @ 10 V	±20V	1470 pF @ 25 V	-	26W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
SIHP24N80AE-GE3 MOSFET N-CH 800V 21A TO220AB Vishay Siliconix	925 In Stock	1 : $6.83000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	21A (Tc)	10V	184mOhm @ 10A, 10V	4V @ 250µA	89 nC @ 10 V	±30V	1836 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IPB60R105CFD7ATMA1 MOSFET N-CH 600V 21A TO263-3 Infineon Technologies	363 In Stock	1 : $7.56000 Cut Tape (CT) 1,000 : $2.73728 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	105mOhm @ 9.3A, 10V	4.5V @ 470µA	42 nC @ 10 V	±20V	1752 pF @ 400 V	-	106W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP9140PBF MOSFET P-CH 100V 21A TO247-3 Vishay Siliconix	1,365 In Stock	1 : $8.05000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	21A (Tc)	10V	200mOhm @ 13A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
STW28NM50N MOSFET N-CH 500V 21A TO247-3 STMicroelectronics	565 In Stock	1 : $14.23000 Tube	MDmesh™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	21A (Tc)	10V	158mOhm @ 10.5A, 10V	4V @ 250µA	50 nC @ 10 V	±25V	1735 pF @ 25 V	-	150W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
DMP3028LPSQ-13 MOSFET P-CH 30V 21A PWRDI5060-8 Diodes Incorporated	5,710 In Stock 75,000 Factory	1 : $2.13000 Cut Tape (CT) 2,500 : $0.54414 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	21A (Tc)	4.5V, 10V	28mOhm @ 7A, 10V	2.4V @ 250µA	22 nC @ 10 V	±20V	1372 pF @ 15 V	-	1.28W	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI5060-8	8-PowerTDFN
STF28N60DM2 MOSFET N-CH 600V 21A TO220FP STMicroelectronics	863 In Stock	1 : $6.31000 Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	160mOhm @ 10.5A, 10V	5V @ 250µA	34 nC @ 10 V	±25V	1500 pF @ 100 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
STB28N60DM2 MOSFET N-CH 600V 21A D2PAK STMicroelectronics	471 In Stock	1 : $6.73000 Cut Tape (CT) 1,000 : $2.39654 Tape & Reel (TR)	MDmesh™ DM2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	160mOhm @ 10.5A, 10V	5V @ 250µA	34 nC @ 10 V	±25V	1500 pF @ 100 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPB21N50C3ATMA1 MOSFET N-CH 560V 21A TO263-3 Infineon Technologies	2,448 In Stock	1 : $7.03000 Cut Tape (CT) 1,000 : $2.47172 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	95 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R165CPXKSA1 MOSFET N-CH 600V 21A TO220-3 Infineon Technologies	260 In Stock	1 : $7.19000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	165mOhm @ 12A, 10V	3.5V @ 790µA	52 nC @ 10 V	±20V	2000 pF @ 100 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
STW28N60DM2 MOSFET N-CH 600V 21A TO247 STMicroelectronics	155 In Stock	1 : $7.64000 Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	160mOhm @ 10.5A, 10V	5V @ 250µA	34 nC @ 10 V	±25V	1500 pF @ 100 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SIHF22N60E-GE3 MOSFET N-CH 600V 21A TO220 Vishay Siliconix	1,487 In Stock	1 : $7.84000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	86 nC @ 10 V	±30V	1920 pF @ 100 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHG24N80AE-GE3 MOSFET N-CH 800V 21A TO247AC Vishay Siliconix	333 In Stock	1 : $7.92000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	21A (Tc)	-	184mOhm @ 10A, 10V	4V @ 250µA	89 nC @ 10 V	±30V	1836 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IPW60R165CPFKSA1 MOSFET N-CH 600V 21A TO247-3 Infineon Technologies	232 In Stock	1 : $8.32000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	165mOhm @ 12A, 10V	3.5V @ 790µA	52 nC @ 10 V	±20V	2000 pF @ 100 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
SIHG22N60E-GE3 MOSFET N-CH 600V 21A TO247AC Vishay Siliconix	495 In Stock	1 : $8.44000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	86 nC @ 10 V	±30V	1920 pF @ 100 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SIHG21N60EF-GE3 MOSFET N-CH 600V 21A TO247AC Vishay Siliconix	449 In Stock	1 : $8.47000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	176mOhm @ 11A, 10V	4V @ 250µA	84 nC @ 10 V	±30V	2030 pF @ 100 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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