128A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SUM80090E-GE3 MOSFET N-CH 150V 128A D2PAK Vishay Siliconix	5,552 In Stock	1 : $4.11000 Cut Tape (CT) 800 : $2.22514 Tape & Reel (TR)	ThunderFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	7.5V, 10V	9mOhm @ 30A, 10V	5V @ 250µA	95 nC @ 10 V	±20V	3425 pF @ 75 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G3R20MT12K SIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor	555 In Stock	1 : $56.68000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	128A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	±15V	5873 pF @ 800 V	-	542W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
SUP80090E-GE3 MOSFET N-CH 150V 128A TO220AB Vishay Siliconix	638 In Stock	1 : $6.12000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	7.5V, 10V	9.4mOhm @ 30A, 10V	5V @ 250µA	95 nC @ 10 V	±20V	3425 pF @ 75 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
FDPF4D5N10C MOSFET N-CH 100V 128A TO220F onsemi	611 In Stock	1 : $10.88000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	4.5mOhm @ 100A, 10V	4V @ 310µA	68 nC @ 10 V	±20V	5065 pF @ 50 V	-	2.4W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
FDP4D5N10C MOSFET N-CH 100V 128A TO220-3 onsemi	526 In Stock 800 Factory	1 : $6.83000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	4.5mOhm @ 100A, 10V	4V @ 310µA	68 nC @ 10 V	±20V	5065 pF @ 50 V	-	2.4W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
E4M0015075K1 MOSFETS AUTOMOTIVE 372W 3.8V NC Wolfspeed, Inc.	444 In Stock	1 : $53.90000 Bulk	E	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	128A (Tc)	15V	21mOhm @ 55.8A, 15V	3.8V @ 15.4mA	191 nC @ 15 V	+19V, -8V	5128 pF @ 500 V	-	372W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
SQJ181ELP-T1_GE3 P-CHANNEL 80-V (D-S) 175C MOSFET Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.37000 Cut Tape (CT) 3,000 : $1.17028 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	128A (Tc)	4.5V, 10V	13.8mOhm @ 10A, 10V	2.5V @ 250µA	89 nC @ 10 V	±20V	5649 pF @ 25 V	-	468W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMN6010SCTBQ-13 MOSFET BVDSS: 41V~60V TO263 T&R Diodes Incorporated	0 In Stock Check Lead Time	800 : $1.99968 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	128A (Tc)	10V	10mOhm @ 25A, 10V	4V @ 1mA	46 nC @ 10 V	±20V	2692 pF @ 25 V	-	5W (Ta), 312W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN6010SCTB-13 MOSFET BVDSS: 41V~60V TO263 T&R Diodes Incorporated	0 In Stock Check Lead Time	800 : $2.11578 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	128A (Tc)	10V	10mOhm @ 25A, 10V	4V @ 1mA	46 nC @ 10 V	±20V	2692 pF @ 25 V	-	5W (Ta), 312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTK128N15 MOSFET N-CH 150V 128A TO264 IXYS	0 In Stock	25 : $12.18520 Tube	MegaMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	10V	15mOhm @ 500mA, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6000 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
AUIRFP4310Z MOSFET N-CH 100V 128A TO247AC Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	6mOhm @ 77A, 10V	4V @ 150µA	188 nC @ 10 V	±20V	7120 pF @ 50 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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