11A (Ta), 40A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSZ120P03NS3GATMA1 MOSFET P-CH 30V 11A/40A 8TSDSON Infineon Technologies	32,053 In Stock	1 : $1.66000 Cut Tape (CT) 5,000 : $0.38612 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	6V, 10V	12mOhm @ 20A, 10V	3.1V @ 73µA	45 nC @ 10 V	±25V	3360 pF @ 15 V	-	2.1W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
FDD6685 MOSFET P-CH 30V 11A/40A TO252 onsemi	5,228 In Stock	1 : $2.77000 Cut Tape (CT) 2,500 : $0.76428 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	20mOhm @ 11A, 10V	3V @ 250µA	24 nC @ 5 V	±25V	1715 pF @ 15 V	-	52W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDU8878 MOSFET N-CH 30V 11A/40A IPAK Fairchild Semiconductor	41,569 Marketplace	626 : $0.72960 Tube	PowerTrench®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	15mOhm @ 35A, 10V	2.5V @ 250µA	26 nC @ 10 V	±20V	880 pF @ 15 V	-	40W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
FDD8878 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	9,452 Marketplace	417 : $1.09439 Bulk	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	15mOhm @ 35A, 10V	2.5V @ 250µA	26 nC @ 10 V	±20V	880 pF @ 15 V	-	40W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSZ105N04NSGATMA2 TRENCH <= 40V Infineon Technologies	0 In Stock Check Lead Time	5,000 : $0.30744 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	11A (Ta), 40A (Tc)	10V	10.5mOhm @ 20A, 10V	4V @ 14µA	17 nC @ 10 V	±20V	1300 pF @ 20 V	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-1	8-PowerVDFN
IRFH5406TRPBF MOSFET N-CH 60V 11A/40A 8PQFN Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	11A (Ta), 40A (Tc)	10V	14.4mOhm @ 24A, 10V	4V @ 50µA	35 nC @ 10 V	±20V	1256 pF @ 25 V	-	3.6W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
FDD8878 MOSFET N-CH 30V 11A/40A TO252AA onsemi	0 In Stock	Obsolete	PowerTrench®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	15mOhm @ 35A, 10V	2.5V @ 250µA	26 nC @ 10 V	±20V	880 pF @ 15 V	-	40W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSZ088N03MSGATMA1 MOSFET N-CH 30V 11A/40A 8TSDSON Infineon Technologies	0 In Stock	Obsolete	OptiMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2V @ 250µA	27 nC @ 10 V	±20V	2100 pF @ 15 V	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BSZ105N04NSGATMA1 MOSFET N-CH 40V 11A/40A 8TSDSON Infineon Technologies	0 In Stock	Obsolete	OptiMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	11A (Ta), 40A (Tc)	10V	10.5mOhm @ 20A, 10V	4V @ 14µA	17 nC @ 10 V	±20V	1300 pF @ 20 V	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BSZ120P03NS3EGATMA1 MOSFET P-CH 30V 11A/40A 8TSDSON Infineon Technologies	0 In Stock	Obsolete	OptiMOS™	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	6V, 10V	12mOhm @ 20A, 10V	3.1V @ 73µA	45 nC @ 10 V	±25V	3360 pF @ 15 V	-	2.1W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BSZ0704LSATMA1 MOSFET N-CH 60V 11A/40A TSDSON Infineon Technologies	0 In Stock	Obsolete	OptiMOS™	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	11A (Ta), 40A (Tc)	4.5V, 10V	9.9mOhm @ 20A, 10V	2.3V @ 14µA	8.6 nC @ 4.5 V	±20V	1300 pF @ 30 V	-	2.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
BSZ0804LSATMA1 MOSFET N-CH 100V 11A/40A TSDSON Infineon Technologies	0 In Stock	Obsolete	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	11A (Ta), 40A (Tc)	4.5V, 10V	9.6mOhm @ 20A, 10V	2.3V @ 36µA	15 nC @ 4.5 V	±20V	2100 pF @ 50 V	-	2.1W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
FDD6685-G MOSFET N-CH 60V SUPERSOT6 onsemi	0 In Stock	Obsolete	PowerTrench®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	20mOhm @ 11A, 10V	3V @ 250µA	24 nC @ 5 V	±25V	1715 pF @ 15 V	-	1.6W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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