FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package
IAUC45N04S6N070HATMA1 MOSFET 2N-CH 40V 45A 8TDSON Infineon Technologies	7,870 In Stock	1 : $2.26000 Cut Tape (CT) 5,000 : $0.71102 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	45A (Tj)	7mOhm @ 22A, 10V	3V @ 9µA	12nC @ 10V	701pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
IAUC60N04S6N031HATMA1 MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies	5,994 In Stock	1 : $2.63000 Cut Tape (CT) 5,000 : $1.07187 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	60A (Tj)	3.1mOhm @ 30A, 10V	3V @ 25µA	30nC @ 10V	1922pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
IAUC60N04S6L030HATMA1 MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies	4,670 In Stock	1 : $1.73000 Cut Tape (CT) 5,000 : $1.07358 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	Logic Level Gate	40V	60A (Tj)	3mOhm @ 30A, 10V	2V @ 25µA	35nC @ 10V	2128pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
ISG0613N04NM6HATMA1 MOSFET 2N-CH 40V 42A 10VITFN Infineon Technologies	2,808 In Stock	1 : $7.11000 Cut Tape (CT) 3,000 : $2.50010 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	42A (Ta), 299A (Tc)	0.88mOhm @ 50A, 10V	2.8V @ 780µA	104nC @ 10V	6200pF @ 20V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerVDFN	PG-VITFN-10-1
ISG0613N04NM6HSCATMA1 MOSFET 2N-CH 40V 42A 10WHITFN Infineon Technologies	2,840 In Stock	1 : $7.53000 Cut Tape (CT) 3,000 : $2.69790 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	42A (Ta), 299A (Tc)	0.88mOhm @ 50A, 10V	2.8V @ 780µA	104nC @ 10V	6200pF @ 20V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerWDFN	PG-WHITFN-10-1
IAUC60N04S6N050HATMA1 MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies	31 In Stock	1 : $2.21000 Cut Tape (CT) 5,000 : $0.81561 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	60A (Tj)	5mOhm @ 30A, 10V	3V @ 13µA	17nC @ 10V	1027pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-57

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.