FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSD840NH6327XTSA1 MOSFET 2N-CH 20V 0.88A SOT363 Infineon Technologies	41,433 In Stock	1 : $0.62000 Cut Tape (CT) 3,000 : $0.12762 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	880mA	400mOhm @ 880mA, 2.5V	750mV @ 1.6µA	0.26nC @ 2.5V	78pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-PO
BSD223PH6327XTSA1 MOSFET 2P-CH 20V 0.39A SOT363 Infineon Technologies	122,747 In Stock	1 : $0.58000 Cut Tape (CT) 3,000 : $0.12389 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	20V	390mA	1.2Ohm @ 390mA, 4.5V	1.2V @ 1.5µA	0.62nC @ 4.5V	56pF @ 15V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6-1
SI1902CDL-T1-GE3 MOSFET 2N-CH 20V 1.1A SC70-6 Vishay Siliconix	467 In Stock	1 : $0.92000 Cut Tape (CT) 3,000 : $0.20521 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	1.1A	235mOhm @ 1A, 4.5V	1.5V @ 250µA	3nC @ 10V	62pF @ 10V	420mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.