Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
KSC1845FTA TRANS NPN 120V 0.05A TO-92-3 onsemi	39,054 In Stock	1 : $0.46000 Cut Tape (CT) 2,000 : $0.10293 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	NPN	50 mA	120 V	300mV @ 1mA, 10mA	50nA (ICBO)	300 @ 1mA, 6V	500 mW	110MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
MJE15032G TRANS NPN 250V 8A TO-220 onsemi	4,727 In Stock	1 : $3.10000 Tube	-	Tube	Active	NPN	8 A	250 V	500mV @ 100mA, 1A	10µA (ICBO)	10 @ 2A, 5V	50 W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MJE15033G TRANS PNP 250V 8A TO-220 onsemi	3,079 In Stock	1 : $3.10000 Tube	-	Tube	Active	PNP	8 A	250 V	500mV @ 100mA, 1A	10µA (ICBO)	10 @ 2A, 5V	50 W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
KSC2383YTA TRANS NPN 160V 1A TO-92-3 onsemi	10,181 In Stock	1 : $0.90000 Cut Tape (CT) 2,000 : $0.21823 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	NPN	1 A	160 V	1.5V @ 50mA, 500mA	1µA (ICBO)	160 @ 200mA, 5V	900 mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body, Formed Leads	TO-92-3
KSA1013YTA TRANS PNP 160V 1A TO-92-3 onsemi	2,879 In Stock	1 : $1.02000 Cut Tape (CT) 2,000 : $0.25085 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	PNP	1 A	160 V	1.5V @ 50mA, 500mA	1µA (ICBO)	160 @ 200mA, 5V	900 mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body, Formed Leads	TO-92-3
TTA004B,Q TRANS PNP 160V 1.5A TO-126N Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : $1.20000 Bag	-	Bag	Active	PNP	1.5 A	160 V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	10 W	100MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126N

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Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.