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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
2N3906-G
TRANS PNP 40V 0.2A TO92
Comchip Technology
59,500
In Stock
54,000
Factory
1 : $0.49000
Bag
-
Bag
ActivePNP200 mA40 V400mV @ 5mA, 50mA100nA (ICBO)30 @ 100mA, 1V-250MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
TO-92-3(StandardBody),TO-226_straightlead
2N4401BU
TRANS NPN 40V 0.6A TO92-3
onsemi
31,468
In Stock
1 : $0.57000
Bulk
-
Bulk
ActiveNPN600 mA40 V750mV @ 50mA, 500mA-100 @ 150mA, 1V625 mW250MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
2N4403BU
TRANS PNP 40V 0.6A TO92-3
onsemi
0
In Stock
1 : $0.58000
Bulk
-
Bulk
ActivePNP600 mA40 V750mV @ 50mA, 500mA-100 @ 150mA, 2V625 mW200MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
25,203
In Stock
1 : $0.66000
Bulk
-
Bulk
ActiveNPN-40 V-50nA (ICBO)100 @ 10mA, 1V-300MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
22,202
In Stock
1 : $0.73000
Bulk
-
Bulk
ActiveNPN50 mA30 V500mV @ 1mA, 10mA50nA (ICBO)300 @ 100µA, 5V625 mW50MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
26,575
In Stock
1 : $0.73000
Bulk
-
Bulk
ActiveNPN50 mA25 V500mV @ 1mA, 10mA50nA (ICBO)400 @ 100µA, 5V625 mW50MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
1,971
In Stock
1 : $0.73000
Bulk
-
Bulk
ActiveNPN600 mA40 V750mV @ 50mA, 500mA-100 @ 150mA, 1V625 mW250MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
1,007
In Stock
1 : $1.44000
Bulk
-
Bulk
ActiveNPN200 mA45 V300mV @ 5mA, 50mA50nA (ICBO)500 @ 10mA, 5V625 mW100MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
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Transistors - Bipolar (BJT) - Single


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.