Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiTexas InstrumentsToshiba Semiconductor and Storage
Series
-NexFET™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
630mA (Ta)5.4A (Ta)5.8A (Ta)38A (Ta), 250A (Tc)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 4.5V3V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
1mOhm @ 35A, 10V1.36mOhm @ 50A, 10V17mOhm @ 5A, 4.5V28mOhm @ 5.8A, 10V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA1.8V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V9.2 nC @ 10 V33 nC @ 4.5 V64 nC @ 4.5 V91 nC @ 10 V
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
60.67 pF @ 16 V386 pF @ 15 V2700 pF @ 10 V6660 pF @ 25 V9000 pF @ 15 V
Power Dissipation (Max)
280mW (Ta)500mW (Ta)720mW (Ta)3.2W (Ta), 195W (Tc)3.8W (Ta), 167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C
Supplier Device Package
8-LFPAK8-VSON-CLIP (5x6)SOT-23-3SOT-523UFM
Package / Case
3-SMD, Flat Leads8-PowerTDFNSOT-1205, 8-LFPAK56SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
270,396
In Stock
1 : $0.25000
Cut Tape (CT)
3,000 : $0.06639
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
63,353
In Stock
1 : $0.36000
Cut Tape (CT)
3,000 : $0.09587
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
±20V
386 pF @ 15 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD17573Q5B
MOSFET N-CH 30V 100A 8VSON
Texas Instruments
7,808
In Stock
1 : $2.66000
Cut Tape (CT)
2,500 : $0.89533
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Ta)
4.5V, 10V
1mOhm @ 35A, 10V
1.8V @ 250µA
64 nC @ 4.5 V
±20V
9000 pF @ 15 V
-
3.2W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
7,233
In Stock
1 : $0.84000
Cut Tape (CT)
3,000 : $0.23834
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
5.4A (Ta)
1.2V, 4.5V
17mOhm @ 5A, 4.5V
1V @ 1mA
33 nC @ 4.5 V
±6V
2700 pF @ 10 V
-
500mW (Ta)
150°C
-
-
Surface Mount
UFM
3-SMD, Flat Leads
LFPAK8
NVMJS1D6N06CLTWG
MOSFET N-CH 60V 38A/250A 8LFPAK
onsemi
10,590
In Stock
6,000
Factory
1 : $4.22000
Cut Tape (CT)
3,000 : $1.69756
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
38A (Ta), 250A (Tc)
4.5V, 10V
1.36mOhm @ 50A, 10V
2V @ 250µA
91 nC @ 10 V
±20V
6660 pF @ 25 V
-
3.8W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.