Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V50 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
42mOhm @ 4.3A, 10V10Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 25 V340 pF @ 20 V
Power Dissipation (Max)
250mW (Tc)1.25W (Ta), 2.1W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84,215
MOSFET P-CH 50V 130MA TO236AB
Nexperia USA Inc.
205,262
In Stock
1 : $0.49000
Cut Tape (CT)
3,000 : $0.08272
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
10V
10Ohm @ 130mA, 10V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
250mW (Tc)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3
Vishay Siliconix
76,768
In Stock
1 : $0.69000
Cut Tape (CT)
3,000 : $0.18617
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
5.6A (Tc)
4.5V, 10V
42mOhm @ 4.3A, 10V
2.5V @ 250µA
9 nC @ 10 V
±20V
340 pF @ 20 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.