Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
53.7A (Tc)108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13A, 10V17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1949 pF @ 40 V2592 pF @ 50 V
Power Dissipation (Max)
2.4W (Ta), 166W (Tc)3.1W (Ta)
Supplier Device Package
PowerDI5060-8 (Type Q)TO-263
Package / Case
8-PowerTDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
14 Power
DMTH8012LPSW-13
MOSFET N-CH 80V 53.7A PWRDI5060
Diodes Incorporated
1,333
In Stock
12,500
Factory
1 : $1.40000
Cut Tape (CT)
2,500 : $0.53483
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
53.7A (Tc)
4.5V, 10V
17mOhm @ 12A, 10V
3V @ 250µA
34 nC @ 10 V
±20V
1949 pF @ 40 V
-
3.1W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
TO-220-3
DMTH10H010LCTB-13
MOSFET N-CH 100V 108A TO220AB
Diodes Incorporated
800
In Stock
16,000
Factory
1 : $2.37000
Cut Tape (CT)
800 : $1.32433
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
108A (Tc)
10V
9.5mOhm @ 13A, 10V
3.5V @ 250µA
53.7 nC @ 10 V
±20V
2592 pF @ 50 V
-
2.4W (Ta), 166W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.