Single

Results: 4
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDMicrochip TechnologyonsemiPanjit International Inc.
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V100 V150 V220 V
Current - Continuous Drain (Id) @ 25°C
120mA (Tj)170mA (Ta)220mA (Ta)130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 18A, 10V3Ohm @ 500mA, 10V6Ohm @ 170mA, 10V12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2.4V @ 1mA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V45 pF @ 25 V110 pF @ 25 V9895 pF @ 75 V
Power Dissipation (Max)
350mW (Ta)360mW (Ta)500mW (Ta)3.8W (Ta), 300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23TO-236AB (SOT23)TO-263-7
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

Showing
of 4
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT23 PKG
TP5322K1-G
MOSFET P-CH 220V 120MA TO236AB
Microchip Technology
5,184
In Stock
1 : $1.11000
Cut Tape (CT)
3,000 : $0.82880
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
220 V
120mA (Tj)
4.5V, 10V
12Ohm @ 200mA, 10V
2.4V @ 1mA
-
±20V
110 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
TO-263
FDB0630N1507L
MOSFET N-CH 150V 130A TO263-7
onsemi
1,640
In Stock
69,600
Factory
1 : $11.46000
Cut Tape (CT)
800 : $5.01350
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
130A (Tc)
10V
6.4mOhm @ 18A, 10V
4V @ 250µA
135 nC @ 10 V
±20V
9895 pF @ 75 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-7, D2PAK (6 Leads + Tab)
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
186,014
In Stock
1 : $0.24000
Cut Tape (CT)
3,000 : $0.04123
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
29,550
In Stock
1 : $0.30000
Cut Tape (CT)
3,000 : $0.05806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
45 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
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Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.