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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction

GD20MPS12A DIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor	2,317 In Stock	1 : $9.44000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	42A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GD10MPS17H DIODE SIL CARB 1.7KV 26A TO247-2 GeneSiC Semiconductor	1,026 In Stock	1 : $12.09000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	26A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	721pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD60MPS17H DIODE SIL CARB 1.7KV 122A TO247 GeneSiC Semiconductor	540 In Stock	1 : $68.20000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	122A	1.8 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 1700 V	4577pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GC50MPS33H DIODE SIL CARB 3.3KV 50A TO247-2 GeneSiC Semiconductor	126 In Stock	1 : $362.38000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	3300 V	50A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	175°C
GD05MPS17H DIODE SIL CARB 1.7KV 15A TO247-2 GeneSiC Semiconductor	672 In Stock	1 : $7.83000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	15A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	361pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD15MPS17H DIODE SIL CARB 1.7KV 36A TO247-2 GeneSiC Semiconductor	1,230 In Stock	1 : $16.47000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	36A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	1082pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP3D020A170B DIODE SIL CARB 1.7KV 67A TO247-2 SemiQ	39 In Stock	1 : $20.75000 Tube	Amp+™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	67A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1700 V	1403pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP3D005A170B DIODE SIL CARB 1.7KV 21A TO247-2 SemiQ	0 In Stock Check Lead Time	1 : $8.61000 Tube	Amp+™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	21A	1.65 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	347pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
DSDI60-18A DIODE GEN PURP 1.8KV 63A TO247AD IXYS	0 In Stock Check Lead Time	1 : $18.47000 Tube	-	Tube	Active	Standard	1800 V	63A	4.1 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	2 mA @ 1800 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
GB05MPS33-263 DIODE SIL CARB 3.3KV 14A TO263-7 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $44.84000 Tube	SiC Schottky MPS™	Tube	Active	SiC (Silicon Carbide) Schottky	3300 V	14A	3 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 3000 V	288pF @ 1V, 1MHz	Surface Mount	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	TO-263-7	-55°C ~ 175°C

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Single

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.