GeneSiC Semiconductor Single Diodes

Results: 772
Series
-*MPS™SiC Schottky MPS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Technology
SchottkySchottky, Reverse PolaritySiC (Silicon Carbide) SchottkyStandardStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
20 V25 V30 V35 V40 V45 V50 V60 V80 V100 V150 V200 V
Current - Average Rectified (Io)
50mA300mA750mA1A2A2.5A4A4.3A5A6A8A9.4A
Voltage - Forward (Vf) (Max) @ If
440 mV @ 15 A470 mV @ 15 A500 mV @ 15 A520 mV @ 40 A550 mV @ 40 A580 mV @ 200 mA580 mV @ 25 A580 mV @ 150 A580 mV @ 200 A580 mV @ 300 A590 mV @ 40 A600 mV @ 150 A
Speed
-Fast Recovery =< 500ns, > 200mA (Io)No Recovery Time > 500mA (Io)Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
0 ns75 ns90 ns110 ns200 ns250 ns500 ns
Current - Reverse Leakage @ Vr
2 µA @ 1200 V3.8 µA @ 8000 V4 µA @ 1200 V5 µA @ 100 V5 µA @ 300 V5 µA @ 600 V5 µA @ 650 V5 µA @ 1200 V5 µA @ 3300 V6 µA @ 1700 V7 µA @ 1200 V10 µA @ 6.5 V
Capacitance @ Vr, F
25pF @ 1V, 1MHz42pF @ 1V, 1MHz66pF @ 1V, 1MHz69pF @ 1V, 1MHz73pF @ 1V, 1MHz76pF @ 1V, 1MHz127pF @ 1V, 1MHz131pF @ 1V, 1MHz138pF @ 1V, 1MHz237pF @ 1V, 1MHz260pF @ 1V, 1MHz274pF @ 1V, 1MHz
Mounting Type
Chassis MountChassis, Stud MountStud MountSurface MountThrough Hole
Package / Case
AxialD-67D-67 HALF-PAKDO-203AA, DO-4, StudDO-203AB, DO-5, StudDO-205AA, DO-8, StudDO-205AB, DO-9, StudDO-214AA, SMBTO-206AB, TO-46-3 Metal CanTO-220-2TO-220-2 Full PackTO-247-2TO-252-3, DPAK (2 Leads + Tab), SC-63TO-257-3
Supplier Device Package
-D-67DO-203ABDO-203AB (DO-5)DO-205AA (DO-8)DO-205AB (DO-9)DO-214AADO-214AA (SMB)DO-4DO-5DO-9TO-220-2TO-220FPTO-247-2
Operating Temperature - Junction
-65°C ~ 150°C-65°C ~ 160°C-65°C ~ 175°C-65°C ~ 180°C-65°C ~ 190°C-65°C ~ 200°C-60°C ~ 180°C-60°C ~ 200°C-55°C ~ 150°C-55°C ~ 155°C-55°C ~ 160°C-55°C ~ 175°C-55°C ~ 210°C-55°C ~ 225°C
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
12,795
In Stock
1 : $2.41000
Cut Tape (CT)
3,000 : $1.49481
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GeneSiC Semiconductor
10,037
In Stock
1 : $3.80000
Cut Tape (CT)
3,000 : $2.48640
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2.5A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
69pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
GeneSiC Semiconductor
13,432
In Stock
1 : $4.74000
Cut Tape (CT)
3,000 : $3.18202
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
TO-252-2
GD10MPS12E
DIODE SIL CARB 1.2KV 29A TO252-2
GeneSiC Semiconductor
9,912
In Stock
1 : $5.30000
Cut Tape (CT)
2,500 : $3.41882
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1.2KV 25A TO220-2
GeneSiC Semiconductor
3,639
In Stock
1 : $5.76000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GD10MPS17H
GD10MPS17H
DIODE SIL CARB 1.7KV 26A TO247-2
GeneSiC Semiconductor
951
In Stock
1 : $12.09000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
26A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
721pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD25MPS17H
GD60MPS06H
DIODE SIL CARB 650V 82A TO247-2
GeneSiC Semiconductor
1,019
In Stock
1 : $15.29000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
82A
1.8 V @ 60 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
1463pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
DO-214AA, SMB
GAP3SLT33-214
DIODE SIC 3.3KV 300MA DO214AA
GeneSiC Semiconductor
3,728
In Stock
1 : $15.92000
Cut Tape (CT)
3,000 : $11.58846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
3300 V
300mA
2.2 V @ 300 mA
-
0 ns
10 µA @ 3300 V
42pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
GD25MPS17H
GD25MPS17H
DIODE SIL CARB 1.7KV 56A TO247-2
GeneSiC Semiconductor
2,315
In Stock
1 : $26.65000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
56A
1.8 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1083pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-263-8
GC05MPS33J
DIODE SIL CARB 3.3KV 5A TO263-7
GeneSiC Semiconductor
1,362
In Stock
1 : $35.51000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
5A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
175°C
TO2472
GD60MPS17H
DIODE SIL CARB 1.7KV 122A TO247
GeneSiC Semiconductor
493
In Stock
1 : $68.20000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
122A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 1700 V
4577pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
S300Y
S300Y
DIODE GEN PURP 1.6KV 300A DO9
GeneSiC Semiconductor
59
In Stock
1 : $97.04000
Bulk
-
Bulk
Active
Standard
1600 V
300A
1.2 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-9
-60°C ~ 180°C
GD25MPS17H
GC50MPS33H
DIODE SIL CARB 3.3KV 50A TO247-2
GeneSiC Semiconductor
83
In Stock
1 : $362.38000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
50A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247-2
175°C
TO-252-2
GD02MPS12E
DIODE SIL CARB 1.2KV 8A TO252-2
GeneSiC Semiconductor
477
In Stock
1 : $2.15000
Cut Tape (CT)
2,500 : $1.30240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
8A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
73pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD30MPS06A
DIODE SIL CARB 650V 30A TO220-2
GeneSiC Semiconductor
1,754
In Stock
1 : $7.55000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
30A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-220-2
TO-220-2
175°C
GD25MPS17H
GD30MPS06H
DIODE SIL CARB 650V 49A TO247-2
GeneSiC Semiconductor
624
In Stock
1 : $8.75000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
49A
-
No Recovery Time > 500mA (Io)
-
-
735pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N3881
1N3881
DIODE GEN PURP 200V 6A DO4
GeneSiC Semiconductor
454
In Stock
1 : $10.55000
Bulk
-
Bulk
Active
Standard
200 V
6A
1.4 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
15 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
GD25MPS17H
GD20MPS12H
DIODE SIL CARB 1.2KV 39A TO247-2
GeneSiC Semiconductor
3,069
In Stock
1 : $10.58000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
39A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD30MPS12H
DIODE SIL CARB 1.2KV 55A TO247-2
GeneSiC Semiconductor
580
In Stock
1 : $14.62000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
55A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 1200 V
1101pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N1190AR
1N1190AR
DIODE GEN PURP REV 600V 40A DO5
GeneSiC Semiconductor
877
In Stock
1 : $15.27000
Bulk
-
Bulk
Active
Standard, Reverse Polarity
600 V
40A
1.1 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
GD15MPS17H
GD15MPS17H
DIODE SIL CARB 1.7KV 36A TO247-2
GeneSiC Semiconductor
1,230
In Stock
1 : $16.47000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
36A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1082pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
S85Q
S85Q
DIODE GEN PURP 1.2KV 85A DO5
GeneSiC Semiconductor
395
In Stock
1 : $22.26000
Bulk
-
Bulk
Active
Standard
1200 V
85A
1.1 V @ 85 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 180°C
GD50MPS12H
GD50MPS12H
DIODE SIL CARB 1.2KV 92A TO247-2
GeneSiC Semiconductor
176
In Stock
1 : $23.34000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
92A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 1200 V
1835pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD25MPS17H
GD10MPS12H
DIODE SIL CARB 1.2KV 10A TO247-2
GeneSiC Semiconductor
570
In Stock
1 : $6.97000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247-2
175°C
1N1200A
1N1200A
DIODE GEN PURP 100V 12A DO4
GeneSiC Semiconductor
120
In Stock
1 : $9.37000
Bulk
-
Bulk
Active
Standard
100 V
12A
1.1 V @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
Showing
of 772

GeneSiC Semiconductor Single Diodes

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.