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GT60N321(Q)

Digi-Key Part Number
GT60N321(Q)-ND
Manufacturer
Manufacturer Product Number
GT60N321(Q)
Description
IGBT 1000V 60A 170W TO3P LH
Detailed Description
IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Power - Max
170 W
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
330ns/700ns
Test Condition
-
Reverse Recovery Time (trr)
2.5 µs
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PL
Supplier Device Package
TO-3P(LH)
Base Product Number
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
Additional Resources
AttributeDescription
Standard Package100