PSMN8R5-100ESFQ Nexperia USA Inc. | Discrete Semiconductor Products

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PSMN8R5-100ESFQ
DigiKey Part Number	PSMN8R5-100ESFQ-ND
Manufacturer	Nexperia USA Inc.
Manufacturer Product Number	PSMN8R5-100ESFQ
Description	MOSFET N-CHANNEL 100V 97A I2PAK
Customer Reference
Detailed Description	N-Channel 100 V 97A (Tc) 183W (Tc) Through Hole I2PAK
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Nexperia USA Inc.
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3181 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	183W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA