VS-GTxxxTS065x Half-Bridge, High-Speed and Low VCE(ON) IGBT Power ModulesVishay's VS-GTxxxTS065x IGBT power modules come in a redesigned INT-A-PAK package.
FGH4L50T65MQDC50 IGBTonsemi's FGH4L50T65MQDC50 powerhouse IGBT leverages IGBT and SiC Schottky diode technology to deliver unrivaled efficiency in high-demand operations.
Hydrogen Electrolysis Infineon's green hydrogen is produced in a CO2-neutral manner by utilizing electrolysis processes powered by renewable energies such as wind and solar.
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.