Versatile and Cost-Effective Pulsed Laser Diodes
Excelitas Technologies' 905 nm pulsed semiconductor, pulsed laser diodes offer beam path parallel or perpendicular to mount plane
Excelitas Technologies’ pulsed laser diodes produce very high optical pulses centered at a wavelength of 905 nm and can emit light parallel or perpendicular to the mounting plane for maximum integration flexibility. The package design and assembly processing techniques are such that the die positioning is well controlled to the reference surface which leads to easy alignment of optical elements to the package.
Multi-cavity layers concentrate the emitting source size and create three emitting active areas. On average, these areas produce 70 W of peak optical output power when operated at 30 A.
The laser diode chip is mounted on an FR4 leadless laminate carrier (LLC) substrate and encapsulated, which provides excellent thermal management and is ideal for surface mount application and hybrid integration. The encapsulate material is a molded epoxy resin for low cost and high-volume manufacturing.
The Diodes are available with various laser powers and can be customized to the user’s specific needs; for instance, binning of power output, to tailor the output power to their specific needs (higher yields for the end user). We can also assemble different lasers in the package, which have their own unique beam size and output power. This can facilitate the coupling into the customer’s optics or enable them to drive with lower current a larger laser to prolong life.