SI1025X Datasheet by Vishay Siliconix

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Vishay Siliconix
Si1025X
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
P-Channel 60 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
High-Side Switching
Low On-Resistance: 4
Low Threshold: - 2 V (typ.)
Fast Switching Speed: 20 ns (typ.)
Low Input Capacitance: 23 pF (typ.)
Miniature Package
Gate-Source ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Small Board Area
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid State Relays
PRODUCT SUMMARY
VDS (min) (V) RDS(on) ()V
GS(th) (V) ID (mA)
- 60 4 at VGS = - 10 V - 1 to - 3.0 - 500
Marking Code: D
Top View
3
1
D2
G2
S1
52
4
6D1
S2
G1
SC-89
Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS - 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
- 200 - 190
mA
TA = 85 °C - 145 - 135
Pulsed Drain Currentb IDM - 650
Continuous Source Current (Diode Conduction)a IS- 450 - 380
Maximum Power Dissipationa
TA = 25 °C PD
280 250 mW
TA = 85 °C 145 130
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
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Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1025X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 10 µA - 60 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 0.25 mA - 1 - 3.0
Gate-Body Leakage IGSS
VDS = 0 V, VGS = ± 10 V ± 200
nA
VDS = 0 V, VGS = ± 5 V ± 100
Zero Gate Voltage Drain Current IDSS
VDS = - 50 V, VGS = 0 V - 25
VDS = - 50 V, VGS = 0 V, TJ = 85 °C - 250
On-State Drain CurrentaID(on) VDS = - 10 V, VGS = - 4.5 V - 50 mA
VDS = - 10 V, VGS = - 10 V - 600
Drain-Source On-ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 25 mA 8
VGS = - 10 V, ID = - 500 mA 4
VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6
Forward Transconductanceagfs VDS = - 10 V, ID = - 100 mA 100 mS
Diode Forward VoltageaVSD IS = - 200 mA, VGS = 0 V - 1.4 V
Dynamicb
Total Gate Charge Qg
VDS = - 30 V, VGS = - 15 V, ID - 500 mA
1.7
nCGate-Source Charge Qgs 0.26
Gate-Drain Charge Qgd 0.46
Input Capacitance Ciss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
23
pFOutput Capacitance Coss 10
Reverse Transfer Capacitance Crss 5
Switchingb, c
Tur n - On T im e tON VDD = - 25 V, RL = 150 , ID - 165 mA,
VGEN = - 10 V, Rg = 10
20 ns
Turn-Off Time tOFF 35
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 10 V
5 V
4 V
6 V
7 V
8 V
Transfer Characteristics
0
300
600
900
1200
0246810
VGS - Gate-to-Source Voltage (V)
- Drain Current (mA)ID
TJ = - 55 °C
125 °C
25 °C
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Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
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Vishay Siliconix
Si1025X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0
4
8
12
16
20
0 200 400 600 800 1000
ID- Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
- On-Resistance (Ω)RDS(on)
VGS = 5 V
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
ID = 500 mA
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
VDS = 30 V
VDS = 48 V
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25 °C
TJ = 125 °C
VSD -Source-to-Drain Voltage (V)
-Source Current (A)IS
10
TJ = - 55 °C
VGS = 0 V
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
8
16
24
32
40
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
0.0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
VGS = 10 V at 500 mA
VGS = 4.5 V at 25 mA
(Normalized)
- On-ResistanceRDS(on)
0
2
4
6
8
10
0246810
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
- On-Resistance (Ω)R DS(on)
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Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1025X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71433.
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
0.5
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
TJ-Junction Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 -3 10-2 00601110 -1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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Package Information
www.vishay.com Vishay Siliconix
Revision: 11-Aug-14 1Document Number: 71612
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-89 6-Leads (SOT-563F)
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIM. MILLIMETERS
MIN. NOM. MAX.
A 0.56 0.58 0.60
A1 0 0.02 0.10
b 0.15 0.22 0.30
c 0.10 0.14 0.18
D 1.50 1.60 1.70
E 1.50 1.60 1.70
E1 1.15 1.20 1.25
e 0.45 0.50 0.55
e1 0.95 1.00 1.05
L 0.25 0.35 0.50
L1 0.10 0.20 0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
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Application Note 826
Vishay Siliconix
Document Number: 72605 www.vishay.com
Revision: 21-Jan-08 21
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.069
(1.753)
0.019
(0.478)
0.031
(0.798)
0.012
(0.300)
0.051
(0.201)
0.020
(0.500)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
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Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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