2N5457-59, MMBF5457-59 Datasheet by onsemi

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FAIRCHILD — SEMICONDUCTOR M /“
G
D
S
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
GSDTO-92 SOT-23
Mark: 6D / 61S / 6L
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
Symbol Characteristic Max Units
2N5457-5459 *MMBF5457-5459
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
ves=r15v‘ VD5= an: 100°C vGs — GAIErSflUREE VOLTAGE (V) u u u u u u u RE I " V1_‘5IV vamnnm 1" x I I v A W I Vrfi‘fi 3 ’vcmm:-37v g a I yh=25”ci)—- 5 Is 1,9451: E WV.” '5 /T.xzac E 6 wow-m- E ‘1 r g “:75” 3 \f4Jr g a [IA-25‘s 5 a v ‘ , E ”“42“: g L 2 " \\\ _'n a n u n .1 72 .1 u 4 72 A: .4 .5 Vs; VCiATEvSDUHBE VOLYAEE (V)
5
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V(BR)GSS Gate-Source Breakdown Voltage IG = 10 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C- 1.0
- 200 nA
nA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 5457
5458
5459
- 0.5
- 1.0
- 2.0
- 6.0
- 7.0
- 8.0
V
V
V
VGS Gate-Source Voltage VDS = 15 V, ID = 100 µA5457
VDS = 15 V, ID = 200 µA5458
VDS = 15 V, ID = 400 µA5459
- 2.5
- 3.5
- 4.5
V
V
V
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5457
5458
5459
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
mA
mA
gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz
5457
5458
5459
1000
1500
2000
5000
5500
6000
µ
mhos
µmhos
µ
mhos
gos Output Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 10 50
µ
mhos
Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.5 7.0 pF
Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.5 3.0 pF
NF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz,
RG = 1.0 megohm, BW = 1.0 Hz 3.0 dB
Transfer Characteristics
Transfer Characteristics
Typical Characteristics
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
g” - m nuscnun u NANCE (mlnhnsl ID - DRAIN DURRENY (mA) g“ - cum" EflMDUETANEE tun-Ins} ‘ Vcslon V“ 5 ”V’ IA = 45% 1- v. =1” 1 4 IA =11“ a A} ' ' Vaslurr) = *3 7 a T. 5*: T. , >551 a 7| 72 73 4 A5 V55 7 GATE SOURCE VDU’AGE (v) v,as = —n.75v V65=-W v “1‘25 n I Z 3 a 5 was — nnAmsouncE vnernE (v) Vcsmm - ID 7 MAIN CURREM (mA) IN — mum snunmnu cuxnzm lmll) g“ 4 rnmscounucuucs (nu-mm “k 4 vnAnscuMnucuncs (mmhnsl 1,. - TnMsnounucnncE lmmhm} | | Vamm - —2 5v IA : 7554: I. = we n =125‘: 4 Venom y, _ / \ Z 16% II II -1 *2 41 V5; - GATESUURCE VOlYAGE (v) m“ umlmavmzlsv,vm:nv "‘ we I‘1 - 11.5 NA v5s - nv VGs‘offy 5 VD 5", ID :1 "A I.“ ‘V I ‘ I). -' -1 >5 7") V;;¢o;;y — GATE CuInFF anTAEE (V) In MI DI I In ID -|‘JRA|N EURRENT (M) (In) nuvuusau uo‘mvun - “A
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
Typical Characteristics (continued)
Output Conductance vs.
Drain Current
Transfer Characteristics
Transconductance vs.
Drain Current
Parameter Interaction
Transfer Characteristics
Common Drain-Source
N-Channel General Purpose Amplifier
(continued)
no; 4 mum on RESISYAMEE 1:1) I“, I“S A GAVE LEAKAGE cunuerfl (nA) 1k VD; = mo mV v5: = uv In 475 -25 25 Is 125 I75 u - AMBIEM'I TEMPERATURE (’9) Wk I k lass mo lax II] “5:11 mA Ipilm 9 ill 20 Ml ll) V0,; 7 DRAIN GATE VOLYAGE (W 50 0,. — unIsE valIAGE (nVNHzI 5., a, 4 Hummus (pH "In S | 0.0! Ill I In “In lv rnEnuEMcv mm Cu; (Vps = “W E", W.» - W) C... (Vm -15v) n ~z —a —n —t -m Vqs » GATE-SOURCE VOLTAGE W}
5
Typical Characteristics (continued)
Capacitance vs. VoltageLeakage Current vs. Voltage
Channel Resistance vs.
Temperature Noise Voltage vs.
Frequency
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
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SuperSOT™-3
SuperSOT™-6
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