TSAL6100 Datasheet by Vishay Semiconductor Opto Division

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VISHAY. www.vishay.com/doc?99912 RDHS cowmm names" FREE 5 emwttertechsupgorl@wshay.com www.v\shay.com/doc?91000
TSAL6100
www.vishay.com Vishay Semiconductors
Rev. 1.8, 13-Mar-14 1Document Number: 81009
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Peak wavelength: λp = 940 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 10°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Infrared remote control units with high power reqirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSAL6100 170 ± 10 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL6100 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
TSAL6100
www.vishay.com Vishay Semiconductors
Rev. 1.8, 13-Mar-14 2Document Number: 81009
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211 Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1 A, tp = 100 μs VF2.2 3 V
Temperature coefficient of VFIF = 1 mA TKVF -1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj40 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie80 170 400 mW/sr
IF = 1 A, tp = 100 μs Ie650 1450 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe40 mW
Temperature coefficient of φeIF = 20 mA TKφe-0.6 %/K
Angle of half intensity ϕ± 10 deg
Peak wavelength IF = 100 mA λp940 nm
Spectral bandwidth IF = 100 mA Δλ 30 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr15 ns
Fall time IF = 100 mA tf15 ns
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
TSAL6100
www.vishay.com Vishay Semiconductors
Rev. 1.8, 13-Mar-14 3Document Number: 81009
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
tp- Pulse Duration (ms)
96 11987
10
0
101
10
1
10
-1
10-1 100102
10-2
I - Forward Current (A)
F
tp/T = 0.01
IFSM = 1 A (Single Pulse)
0.05
0.1
0.5
1.0
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
0.1
1
10
100
1000
10000
1 10 100 1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 100 μs
0.1
1
10
100
1000
1 10 100 1000
Phie - Radiant Power (mW)
IF - Forward Current (mA)
tp = 100 μs
-10 10 50
0100
0
0.4
0.8
1.2
1.6
Ie rel;
140
94 7993
IF = 20 mA
Φe rel
T
amb - Ambient Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
IF = 30 mA
\ane .com/doc791oou nm www.msha Cf — V VISHAY.
TSAL6100
www.vishay.com Vishay Semiconductors
Rev. 1.8, 13-Mar-14 4Document Number: 81009
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
15989
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
35.2 ± 0.55
Ø 5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
14436
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.4)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R2.49 (sphere)
0.5 + 0.15
- 0.05
— VISHAY. V
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