STD35P6LLF6 Datasheet

STMicroelectronics

Download PDF Datasheet

Datasheet

April 2017
DocID025600 Rev 3
1/16
This is information on a product in full production.
www.st.com
STD35P6LLF6
P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
RDS(on) max.
ID
PTOT
STD35P6LLF6
60 V
0.028 Ω
35 A
70 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code
Marking
Package
Packaging
STD35P6LLF6
35P6LLF6
DPAK
Tape and Reel
AM11258v1
D(2, TAB)
S(3)
G(1)
Contents
STD35P6LLF6
2/16
DocID025600 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 DPAK package information ............................................................. 10
4.2 Packing information ......................................................................... 13
5 Revision history ............................................................................ 15
STD35P6LLF6
Electrical ratings
DocID025600 Rev 3
3/16
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
35
A
ID
Drain current (continuous) at TC = 100 °C
25
A
IDM(1)
Drain current (pulsed)
140
A
PTOT
Total dissipation at TC = 25 °C
70
W
Tstg
Storage temperature range
-55 to 175
°C
Tj
Operating junction temperature range
Notes:
(1)Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.14
°C/W
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
Electrical characteristics
STD35P6LLF6
4/16
DocID025600 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 250 µA
60
V
IDSS
Zero gate voltage Drain
current
VGS = 0 V, VDS = 60 V
1
µA
VGS = 0 V, VDS = 60 V,
TC = 125 °C(1)
10
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
1
2.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 17.5 A
0.025
0.028
Ω
VGS = 4.5 V, ID= 17.5 A
0.03
0.036
Notes:
(1)Defined by design, not subject to production test.
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
-
3780
-
pF
Coss
Output capacitance
-
262
-
pF
Crss
Reverse transfer
capacitance
-
170
-
pF
Qg
Total gate charge
VDD = 30 V, ID = 35 A,
VGS = 0 to 4.5 V (see Figure
14: "Gate charge test circuit")
-
30
-
nC
Qgs
Gate-source charge
-
10.8
-
nC
Qgd
Gate-drain charge
-
10.5
-
nC
RG
Gate input resistance
ID = 0 A, gate DC bias = 0 V,
f = 1 MHz, magnitude of
alternative signal = 20 mV
-
1.7
-
Ω
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30 V, ID = 17.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Switching times
test circuit for resistive load")
-
51.4
-
ns
tr
Rise time
-
39
-
ns
td(off)
Turn-off-delay time
-
171
-
ns
tf
Fall time
-
21
-
ns
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
STD35P6LLF6
Electrical characteristics
DocID025600 Rev 3
5/16
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD (1)
Forward on voltage
VGS = 0 V, ISD = 35 A
-
1.5
V
trr
Reverse recovery time
ISD = 35 A, di/dt = 100 A/µs,
VDD = 48 V, (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
-
34
ns
Qrr
Reverse recovery charge
-
48
nC
IRRM
Reverse recovery current
-
2.8
A
Notes:
(1)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
Electrical characteristics
STD35P6LLF6
6/16
DocID025600 Rev 3
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage vs
temperature
Figure 7: Normalized V(BR)DSS vs temperature
STD35P6LLF6
Electrical characteristics
DocID025600 Rev 3
7/16
Figure 8: Static drain-source on-resistance
Figure 9: Normalized on-resistance vs. temperature
Figure 10: Gate charge vs gate-source voltage
Figure 11: Capacitance variations voltage
Figure 12: Source-drain diode forward characteristics
Test circuits
STD35P6LLF6
8/16
DocID025600 Rev 3
3 Test circuits
Figure 13: Switching times test circuit for
resistive load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
STD35P6LLF6
Package information
DocID025600 Rev 3
9/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package information
STD35P6LLF6
10/16
DocID025600 Rev 3
4.1 DPAK package information
Figure 16: DPAK (TO-252) type A2 package outline
0068772_type-A2_rev21
STD35P6LLF6
Package information
DocID025600 Rev 3
11/16
Table 8: DPAK (TO-252) type A2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
5.10
5.25
E
6.40
6.60
E1
5.10
5.20
5.30
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
1.00
R
0.20
V2
Package information
STD35P6LLF6
12/16
DocID025600 Rev 3
Figure 17: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
STD35P6LLF6
Package information
DocID025600 Rev 3
13/16
4.2 Packing information
Figure 18: DPAK (TO-252) tape outline
Package information
STD35P6LLF6
14/16
DocID025600 Rev 3
Figure 19: DPAK (TO-252) reel outline
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
6.8
7
A
330
B0
10.4
10.6
B
1.5
B1
12.1
C
12.8
13.2
D
1.5
1.6
D
20.2
D1
1.5
G
16.4
18.4
E
1.65
1.85
N
50
F
7.4
7.6
T
22.4
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
STD35P6LLF6
Revision history
DocID025600 Rev 3
15/16
5 Revision history
Table 10: Document revision history
Date
Revision
Changes
11-Dec-2013
1
First release.
24-Feb-2015
2
In title description on cover page, changed 0.02 Ω to 0.023 Ω
In features table on cover page, changed 0.028 Ω to 0.026 Ω
Updated Table 2: Absolute maximum ratings
Updated Table 4: Static renamed table and updated Static
drainsource on-resistance values
Updated Table 5: Dynamic test conditions and all typical values
Updated Table 6: Switching times test conditions and all typical
values
Updated Table 7: Source-drain diode test conditions and all
typical values
Added Section 2.2: Electrical characteristics (curves)
Updated Section 4: Package mechanical data Minor text changes
03-Apr-2017
3
Updated VSD maximum value in Table 7: "Source drain diode".
Updated Section 4.1: "DPAK package information"
Minor text changes.
STD35P6LLF6
16/16
DocID025600 Rev 3
IMPORTANT NOTICE PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications , and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics All rights reserved

Products

MOSFET P-CH 60V 35A DPAK
Available Quantity0
Unit Price1.82