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NSR0530H Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. P2 1Publication Order Number:
NSR0530H/D
NSR0530H
Product Preview
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0530H in a SOD−323 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop − 370 mV @ 100 mA
Low Reverse Current − 1.4 mA @ 10 V VR
500 mA of Continuous Forward Current
Very High Switching Speed
Low Capacitance − CT = 10 pF
This is a Pb−Free Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Current (DC) IF500 mA
Forward Surge Current
(60 Hz @ 1 cycle) IFSM 2.5 A
ESD Rating: Human Body Model
Machine Model ESD Class 3B
Class C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping
ORDERING INFORMATION
NSR0530HT1G SOD−323
(Pb−Free) 3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−323
CASE 477
STYLE 1
AK = Specific Device Code
M = Month Code
MARKING
DIAGRAM
AK M
1
2
NSR0530H
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°CRqJA
PD
740
160
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°CRqJA
PD
460
270
°C/W
mW
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR1.4
24 10
200
mA
Forward Voltage (IF = 10 mA)
(IF = 100 mA)
(IF = 500 mA)
VF0.28
0.37
0.52
0.37
0.46
0.62
V
Total Capacitance
(VR = 1.0 V, f = 1 MHz) CT 10 pF
Figure 1. Forward Voltage Figure 2. Leakage Current
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
0.60.40.30.10
0.001
0.01
0.1
1
10
100
1000
35302520151050
0.001
0.01
0.1
10
1,000,000
Figure 3. Total Capacitance
VR, REVERSE VOLTAGE (V)
3020151050
0
2
4
10
14
20
IF, FORWARD CURRENT (mA)
Ir, REVERSE CURRENT (mA)
CT, TOTAL CAPACITANCE (pF)
0.2
125°C
−40°C
85°C
25°C
125°C
−40°C
85°C
25°C
1
25 35
TA = 25°C
0.5
10,000
100
1000
10,000
100,000
6
8
12
16
18
Figure 4. Forward Surge Current
TP, PULSE ON TIME (ms)
10010.10.010.001
0
0.5
1
2.5
3.5
IFSM, FORWARD SURGE CURRENT (A)
10 1000
Based on square wave currents
TJ = 25°C prior to surge
1.5
2
3
4
4.5
NSR0530H
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3
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NSR0530H/D
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