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MBRA340T3G, NRVBA340T3G Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2013
January, 2018 − Rev. 9 1Publication Order Number:
MBRA340T3/D
MBRA340, NRVBA340,
SBRA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Device Meets MSL 1 Requirements
Device Package Shipping
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
MARKING DIAGRAM
SMA
CASE 403D
STYLE 1
A34
AYWWG
www.onsemi.com
MBRA340T3G
NRVBA340T3G,
NRVBA340T3G−VF01,
SBRA340T3G
Cathode Anode
A34 = Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G= Pb−Free Package
12
SMA
(Pb−Free) 5,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front sid
e
optional. In cases where the Assembly Location
is
stamped in the package bottom (molding ejecter pin
),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current
(At Rated VR, TL = 100°C) IO3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Storage/Operating Case Temperature Tstg, TC−55 to +150 °C
Operating Junction Temperature (Note 1) TJ−55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2) RθJL
RθJA
15
81 °C/W
2. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 3.0 A)
VFTJ = 25°C TJ = 100°CVolts
0.450 0.390
Maximum Instantaneous Reverse Current
(VR = 40 V)
IRTJ = 25°C TJ = 100°CmA
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
1
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.10 0.30 0.50
TJ = 125°C
TJ = −55°C
TJ = 25°C
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40 0.60
TJ = 100°C
10
1
0.1
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.10 0.30 0.50
TJ = 125°C
TJ = −55°C
TJ = 25°C
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40
TJ = 100°C
0.6
0
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
3
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4020100
I
R
, REVERSE CURRENT (AMPS)
100E−9
100E−12
TJ = 125°C
1E−3
1E−6
10E−9
1E−9
TJ = −55°C
TJ = 25°C
TJ = 100°C
VR, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4
0
20100
IR, MAXIMUM REVERSE CURRENT (AMPS
)
TJ = 125°C
1E−3
1E−6
TJ = −55°C
TJ = 25°C
TJ = 100°C
Figure 5. Current Derating
25 50 75
0
2.5
IO, AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
0.5 1.5 2 30 1 2.5
1.8
0
0.6
IO, AVERAGE FORWARD CURRENT (AMPS)
PFO, AVERAGE POWER DISSIPATION (WATTS)
Figure 7. Capacitance
0.5
1
1.5
2
5
3
3.5
4.5
SQUARE WAVE
dc
3.5 54.5
0.2
0.4
1.0
0.8
1.6
100 150125
Figure 8. Typical Operating Temperature
Derating
VR, REVERSE VOLTAGE (VOLTS)
302520151050
100
1000
C, CAPACITANCE (pF)
40
VR, DC REVERSE VOLTAGE (VOLTS)
302520151050
115
105
95
85
75
65
55
125
TJ, DERATED OPERATING TEMPERATURE (°C)
Ipk/IO = 10
Ipk/IO = 5
Ipk/IO = p
freq = 20 kHz 1.4
1.2 dc
SQUARE
WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
35
TJ = 25 °C
4035
RqJA = 22 °C/W
RqJA = 43 °C/W
RqJA = 96 °C/W
RqJA = 81 °C/W
4
4
RqJA = 63 °C/W
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
4
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
t, TIME (S)
0.0001 0.001 0.10.00001 0.01 1 10 100 100
0
R
(t)
, TRANSIENT THERMAL RESISTANCE (
°
C/W)
0.1
1
10
100
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
t, TIME (S)
0.0001 0.001 0.10.00001 0.01 1 10 100 100
0
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
0.1
1
10
100
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
5
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.97 2.10 2.20 0.078
INCHES
A1 0.05 0.10 0.20 0.002
b1.27 1.45 1.63 0.050
c0.15 0.28 0.41 0.006
D2.29 2.60 2.92 0.090
E4.06 4.32 4.57 0.160
L0.76 1.14 1.52 0.030
0.083 0.087
0.004 0.008
0.057 0.064
0.011 0.016
0.103 0.115
0.170 0.180
0.045 0.060
NOM MAX
4.83 5.21 5.59 0.190 0.205 0.220
HE
E
bD
Lc
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
4.000
0.157
2.000
0.079
2.000
0.079
ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
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P
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MBRA340T3/D
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