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2N7002E Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2007
March, 2019 Rev. 6
1Publication Order Number:
2N7002E/D
2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, NChannel, SOT23
Features
Low RDS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Drain Current (Note 1)
Steady State TA = 25°C
TA = 85°C
t < 5 s TA = 25°C
TA = 85°C
ID260
190
310
220
mA
Power Dissipation (Note 1)
Steady State
t < 5 s
PD300
420
mW
Pulsed Drain Current (tp = 10 ms) IDM 1.2 A
Operating Junction and Storage
Temperature Range
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode) IS300 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
JunctiontoAmbient Steady State
(Note 1)
RqJA 417 °C/W
JunctiontoAmbient t 5 s (Note 1) RqJA 300
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
Device Package Shipping
ORDERING INFORMATION
2N7002ET1G 3000 / Tape & Reel
Simplified Schematic
SOT23
CASE 318
STYLE 21
703 MG
G
703 = Device Code
M = Date Code
G= PbFree Package
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
SOT23
(PbFree)
60 V 3.0 W @ 4.5 V
RDS(on) MAX
310 mA
ID MAX
(Note 1)
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 W @ 10 V
(Top View)
3
1
2
NChannel
(Note: Microdot may be in either location)
www.onsemi.com
2N7002ET7G,
SN2N7002ET7G
3500 / Tape & ReelSOT23
(PbFree)
2N7002E
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ75 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1 mA
TJ = 125°C 500
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.4 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 240 mA 0.86 2.5 W
VGS = 4.5 V, ID = 50 mA 1.1 3.0
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz,
VDS = 25 V
26.7 40 pF
Output Capacitance COSS 4.6
Reverse Transfer Capacitance CRSS 2.9
Total Gate Charge QG(TOT)
VGS = 5 V, VDS = 10 V;
ID = 240 mA
0.81 nC
Threshold Gate Charge QG(TH) 0.31
GatetoSource Charge QGS 0.48
GatetoDrain Charge QGD 0.08
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
TurnOn Delay Time td(ON)
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
1.7 ns
Rise Time tr1.2
TurnOff Delay Time td(OFF) 4.8
Fall Time tf3.6
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 200 mA
TJ = 25°C 0.79 1.2 V
TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%
3. Switching characteristics are independent of operating junction temperatures
2N7002E
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3
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
2.0
6420
0
0.4
0.8
1.2
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
2.4
Figure 5. OnResistance vs. GatetoSource
Voltage
Figure 6. OnResistance Variation with
Temperature
VGS, GATETOSOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.2
1.6
12510075502502550
0.6
1.0
1.4
1.8
2.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V 5.0 V
7.0 V
8.0 V
9.0 V 4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
2.0 V TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 4.5 V
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
2.4
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 10 V
ID = 250 mA
ID = 75 mA
150
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
2N7002E
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
10.80.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
1.21.00.80.60.40.2
0.01
1
10
VGS, GATETOSOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
ID = 0.25 A
201612840
0
10
20
30
40
C, CAPACITANCE (pF)
Ciss
Coss
Crss
TJ = 25°C
VGS = 0 V
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
TJ = 25°CTJ = 85°C
VGS = 0 V
0.1
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.6
0.7
-60 -20 20 60 100 140
T, TEMPERATURE (°C)
Figure 10. Temperature versus Gate
Threshold Voltage
2N7002E
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5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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2N7002E/D
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