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BSS138PW Datasheet

Nexperia USA Inc.

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Datasheet

1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp300 μs; δ≤0.01.
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tamb =25°C--60V
VGS gate-source voltage Tamb =25°C--±20 V
IDdrain current Tamb =25°C;
VGS =10V
[1] --320mA
RDSon drain-source on-state
resistance Tj=25°C;
VGS =10V;
ID= 300 mA
[2] -0.91.6Ω
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 2 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BSS138PW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code[1]
BSS138PW XJ*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb =25°C-60V
VGS gate-source voltage Tamb =25°C-±20 V
IDdrain current VGS =10V [1]
Tamb =25°C-320mA
Tamb =100°C-200mA
IDM peak drain current Tamb =25°C;
single pulse; tp10 μs-1.2A
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 3 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot total power dissipation Tamb =25°C[2] -260mW
[1] -310mW
Tsp =25°C-830mW
Tjjunction temperature 150 °C
Tamb ambient temperature 55 +150 °C
Tstg storage temperature 65 +150 °C
Source-drain diode
ISsource current Tamb =25°C[1] -280mA
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a
function of ambient temperature Fig 2. Normalized continuous drain current as a
function of ambient temperature
Tamb (°C)
75 17512525 7525
017aaa001
40
80
120
Pder
(%)
0
Tamb (°C)
75 17512525 7525
017aaa002
40
80
120
Ider
(%)
0
Pder
Ptot
Ptot 25°C()
------------------------100 %×=Ider
ID
ID25°C()
--------------------100 %×=
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 4 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM = single pulse
(1) tp= 100 μs
(2) tp=1ms
(3) tp=10ms
(4) tp= 100 ms
(5) DC; Tsp =25°C
(6) DC; Tamb =25°C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
017aaa121
101
102
1
10
ID
(A)
103
VDS (V)
101102
101
(1)
(2)
(3)
(4)
(5)
(6)
Limit RDSon = VDS/ID
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - 415 480 K/W
[2] - 350 400 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 150 K/W
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 5 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa028
tp (s)
103102103
101102101
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
017aaa029
tp (s)
103102103
101102101
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 6 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
7. Characteristics
[1] Pulse test: tp300 μs; δ≤0.01.
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=10μA; VGS =0V 60--V
VGS(th) gate-source threshold
voltage ID=250μA; VDS =V
GS 0.9 1.2 1.5 V
IDSS drain leakage current VDS =60V; V
GS =0V
Tj=25°C --1μA
Tj= 150 °C --10μA
IGSS gate leakage current VGS =±20 V; VDS = 0 V - - 100 nA
RDSon drain-source on-state
resistance
[1]
VGS =5V; I
D=50mA - 1 2 Ω
VGS =10V; I
D=300mA - 0.9 1.6 Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA [1] - 700 - mS
Dynamic characteristics
QG(tot) total gate charge ID=300mA;
VDS =30V;
VGS =4.5V
- 0.72 0.8 nC
QGS gate-source charge - 0.14 - nC
QGD gate-drain charge - 0.24 - nC
Ciss input capacitance VGS =0V; V
DS =10V;
f=1MHz - 3850pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -4-pF
td(on) turn-on delay time VDS =50V;
RL=250Ω;
VGS =10V;
RG=6Ω
- 26ns
trrise time -3-ns
td(off) turn-off delay time - 9 20 ns
tffall time - 4 - ns
Source-drain diode
VSD source-drain voltage IS=115mA; V
GS = 0 V 0.47 0.75 1.1 V
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 7 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Tamb =25°CT
amb =25°C; VDS =5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Tamb =25°C
(1) VGS =2.0V
(2) VGS =2.5V
(3) VGS =3.0V
(4) VGS =3.5V
(5) VGS =10V
ID=300mA
(1) Tamb = 150 °C
(2) Tamb =25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VDS (V)
0.0 4.03.01.0 2.0
017aaa112
0.4
0.6
0.2
0.8
1.0
ID
(A)
0.0
3.0 V
2.25 V
2.0 V
2.5 V
2.75 V
VGS = 3.5 V
017aaa113
104
105
103
ID
(A)
106
VGS (V)
0.0 2.01.50.5 1.0
(2)(1) (3)
ID (A)
0.0 1.00.80.4 0.60.2
017aaa114
2.0
3.0
1.0
4.0
5.0
RDSon
(Ω)
0.0
(2)(1)
(3)
(5)
(4)
VGS (V)
0.0 10.08.04.0 6.02.0
017aaa115
2.0
4.0
6.0
RDSon
(Ω)
0.0
(1)
(2)
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 8 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
VDS >I
D×RDSon
(1) Tamb =25°C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
ID= 0.25 mA; VDS =V
GS
(1) maximum values
(2) typical values
(3) minimum values
f=1MHz; V
GS =0V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
017aaa116
VGS (V)
0.0 3.02.01.0
0.4
0.2
0.6
0.8
ID
(A)
0.0
(1) (2)
(2) (1)
Tamb (°C)
60 180120060
017aaa022
1.2
0.6
1.8
2.4
a
0.0
aRDSon
RDSon 25°C()
-----------------------------
=
Tamb (°C)
60 180120060
017aaa117
1.0
0.5
1.5
2.0
VGS(th)
(V)
0.0
(2)
(1)
(3)
017aaa118
VDS (V)
101102
101
10
102
C
(pF)
1
(2)
(1)
(3)
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 9 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
ID= 300 mA; VDS =30V; T
amb =25°C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS =0V
(1) Tamb = 150 °C
(2) Tamb =25°C
Fig 16. Source current as a function of source-drain voltage; typical values
QG (nC)
0.0 0.80.60.2 0.4
017aaa119
2.0
3.0
1.0
4.0
5.0
VGS
(V)
0.0
003aaa50
8
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
VSD (V)
0.0 1.20.80.4
017aaa120
0.4
0.8
1.2
IS
(A)
0.0
(1) (2)
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 10 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 11 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT323 (SC-70)
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15 0.65
e
1.3 2.2
2.0
0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 12 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint SOT323 (SC-70)
Fig 20. Wave soldering footprint SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_
fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_f
w
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 13 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BSS138PW v.1 20101102 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 14 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved
BSS138PW All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 2 November 2010 15 of 16
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia BSS138PW
60 V, 320 mA N-channel Trench MOSFET
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Contact information. . . . . . . . . . . . . . . . . . . . . 15
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
02 November 2010

Products

MOSFET N-CH 60V 320MA SOT323
Available Quantity290440
Unit Price0.32