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Microwave Technology Inc.
RF MESFETs
CEL
RF MOSFETs
 
Infineon Technologies
RF MOSFETs
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RF MOSFETs

Low Noise N-Channel MOSFET

CEL

Features
Applications
  • DBS LNB gain-stage, Mix-stage
  • Low noise amplifier for microwave communication systems
Specifications
  • Current - Test:10mA
  • Current Rating (Amps):15mA
  • Frequency:12GHz ~ 20GHz
  • Gain:11.9dB ~ 13.8dB
  • Noise Figure:0.5dB ~ 1.05dB
  • Power - Output:125mW
  • Supplier Device Package:4-Super Mini Mold ~ 4-Micro-X
  • Transistor Type:pHEMT FET
  • Voltage - Rated:4V
  • Voltage - Test:2V
Parts

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CE3512K2CE3512K2RF FET 4V 12GHZ 4MICROX pHEMT FET12GHz13.7dB2V4-Micro-XRoHS
CE3512K2-C1CE3512K2-C1RF FET 4V 12GHZ 4MICROX pHEMT FET12GHz13.7dB2V4-Micro-XRoHS
CE3520K3-C1CE3520K3-C1RF FET 4V 20GHZ 4MICROX pHEMT FET20GHz13.8dB2V4-Micro-XRoHS
CE3514M4CE3514M4RF FET 4V 12GHZ SOT343 pHEMT FET12GHz12.2dB2V4-SMD, Flat LeadsRoHS
CE3521M4CE3521M4RF FET 4V 20GHZ SOT343 pHEMT FET20GHz11.9dB2VSC-82A, SOT-343RoHS
CE3520K3CE3520K3RF FET 4V 20GHZ 4MICROX pHEMT FET20GHz13.8dB2V4-Micro-XRoHS

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Associated Product
CEL RF HEMT, HFET, LDMOS FETs
Category: Semiconductors, Development Tools-Discrete Semiconductors-Transistors, FETs, IGBTs-RF FETs-HEMT, HFET, LDMOS