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Diodes Incorporated
N-Channel MOSFET (Metal Oxide)
Honeywell Aerospace
N-Channel MOSFET (Metal Oxide)
Infineon Technologies
N-Channel MOSFET (Metal Oxide)
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N-Channel MOSFET (Metal Oxide)

N-Channel MOSFET (Metal Oxide)

Honeywell Aerospace

The HTNFET is a high reliability N-Channel Power FET designed specifically for extremely wide temperature range applications such as down-hole instrumentation, aerospace, turbine engine and industrial process control.

Product Description

This power FET is fabricated using a Silicon-On-Insulator (SOI) process that dramatically reduces leakage currents at high temperatures.

  • Down-Hole Oil, Gas and Geothermal Well
  • Aerospace and Avionics
  • Turbine Engine Control
  • Industrial Process Control
  • Nuclear Reactor
  • Electric Power Conversion
  • Heavy Duty Internal Combustion Engines
  • Drain to Source Voltage (Vdss):55V
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • FET Type:N-Channel
  • Gate Charge (Qg) (Max) @ Vgs:4.3nC
  • Input Capacitance (Ciss) (Max) @ Vds:290pF
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 225°C (TJ)
  • Package / Case:4-SIP
  • Power Dissipation (Max):50W (Tj)
  • Rds On (Max) @ Id, Vgs:400mOhm @ 100mA, 5V
  • Supplier Device Package:4-Power Tab
  • Technology:MOSFET (Metal Oxide)
  • Vgs (Max):10V
  • Vgs(th) (Max) @ Id:2.4V @ 100µA
  • Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs:5V
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:28V