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Power Integrations
Half Bridge
pSemi
Half Bridge
 
Renesas Electronics America Inc.
Half Bridge
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Half Bridge

Power Management External MOSFET, Half Bridge Driver

pSemi

pSemi's half-bridge driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs.

Features
  • High- and Low-side FET drivers
  • Dead-time control
  • Fast propagation delay, 8 ns
  • Tri-state enable mode
  • Sub-nanosecond rise and fall time
  • 2A/4A peak source/sink current
Applications
  • DC–DC conversions
  • AC–DC conversions
  • Wireless power
  • Class D amplifiers
Specifications
  • Channel Type:Synchronous
  • Current - Peak Output (Source, Sink):2A, 4A
  • Driven Configuration:Half-Bridge
  • Gate Type:N-Channel MOSFET
  • High Side Voltage - Max (Bootstrap):100V
  • Mounting Type:Surface Mount
  • Number of Drivers:2
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Package / Case:Die
  • Packaging:Tape & Reel (TR)
  • Supplier Device Package:Die
Parts

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PE29100A-XPE29100A-XHIGH-SPEED FET DRIVER 33 MHZ Half-BridgeSynchronous2N-Channel MOSFETDieRoHS
PE29101A-XPE29101A-XHIGH SPEED FET DRIVER WITH SYNC Half-BridgeSynchronous2N-Channel MOSFETDie
PE29102A-XPE29102A-XULTRACMOS HIGH-SPEED FET DRIVER Half-BridgeSynchronous2N-Channel MOSFETDie

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Associated Product
pSemi EK29100-03
Category: Semiconductors, Development Tools-Programmers, Development Systems-Evaluation Boards-Evaluation, Demo Boards, Kits-Power Management