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Vishay Semiconductor Diodes Division
Avalanche Diode
FERD (Field Effect Rectifier Diode)
AVX Corporation
Schottky Barrier Rectifier Diode
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FERD (Field Effect Rectifier Diode)

Field Effect Rectifier Diode


The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

  • ST advanced rectifier process
  • Stable leakage current over reverse voltage
  • Low forward voltage drop
  • High frequency operation
  • ECOPACK®2 compliant component
  • Current - Average Rectified (Io):15A ~ 40A
  • Current - Reverse Leakage @ Vr:100µA ~ 650µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:10A ~ 20A
  • Diode Type:FERD (Field Effect Rectifier Diode)
  • Operating Temperature - Junction:150°C (Max) ~ 175°C (Max)
  • Voltage - DC Reverse (Vr) (Max):50V ~ 100V
  • Voltage - Forward (Vf) (Max) @ If:490mV ~ 780mV
  • Voltage Coupled to Current - Reverse Leakage @ Vr:50V ~ 100V

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FERD15S50SB-TRFERD15S50SB-TRDIODE RECT 50V 15A DPAK FERD (Field Effect Rectifier Diode)50V15A490mVTO-252-3, DPak (2 Leads + Tab), SC-63RoHS
FERD20S100SB-TRFERD20S100SB-TRDIODE RECT 100V 20A DPAK FERD (Field Effect Rectifier Diode)100V20A780mVTO-252-3, DPak (2 Leads + Tab), SC-63RoHS
FERD20S100STSFERD20S100STSDIODE RECT 100V 20A TO220AB FERD (Field Effect Rectifier Diode)100V20A780mVTO-220-3RoHS
FERD40H100SFPFERD40H100SFP100 V 40 A FIELD-EFFECT RECTIFIEFERD (Field Effect Rectifier Diode)100V40A675mVTO-220-3 Full PackRoHS

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